The tungsten oxide films by two methods were characterized by atomic force microscope, double-beam UV-VIS-NIR spectrophotometer and X-diffractometer.
本文分别用原子力显微镜、双束紫外可见分光光度计、X-衍射仪等表征了用以上两种方法制备的三氧化钨薄膜。
WO_3 is probably the most promising one of various electrochromic materials due to its excellent electrochromic properties, especially the amorphous tungsten oxide films.
非晶态WO_3薄膜具有优良的电致变色特性,被认为是最有发展前景的功能材料之一。
Transparent conductive, tungsten-doped indium oxide(IWO) films with the high carrier molbility were grown by magnetron sputtering on glass substrates, followed by in-situ annealing.
采用直流磁控溅射法在清洁玻璃基片上制备了掺钨氧化铟(IWO)透明导电氧化物薄膜。
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